bar 81w oct-05-1999 1 silicon rf switching diode design for use in shunt configuration high shunt signal isolation low shunt insertion loss vps05605 4 2 1 3 type marking pin configuration package bar 81w bbs 1 = a 2 = c 3 = a 4 = c sot-343 maximum ratings symbol value unit parameter diode reverse voltage v r v 30 i f 100 ma forward current mw 100 total power dissipation , t s = 138 c p tot junction temperature t j c 150 operating temperature range -55 ... 125 c t op t st g storage temperature -55 ... 150 thermal resistance junction - ambient 1) 200 r thja k/w 120 junction - soldering point r thjs 1) package mounted on alumina 15mm x 16.7mm x 0.7mm
bar 81w oct-05-1999 2 electrical characteristics at t a = 25 c, unless otherwise specified. parameter values symbol unit typ. max. min. characteristics - - na i r reverse current v r = 20 v 20 0.93 v f 1 v forward voltage i f = 100 ma - ac characteristics diode capacitance v r = 1 v, f = 1 mhz v r = 3 v, f = 1 mhz c t - - 0.6 0.57 - - pf forward resistance i f = 5 ma, f = 100 mhz r f - 0.7 - 0.15 - nh series inductance chip to ground l s - configuration of the shunt-diode - a perfect ground is essential for optimum isolation - the anode pins should be used as passage for rf
bar 81w oct-05-1999 3 forward current i f = f ( t a *; t s ) *): mounted on alumina 15mm x 16.7mm x 0.7m m 0 20 40 60 80 100 120 c 150 t a ,t s 0 10 20 30 40 50 60 70 80 90 100 ma 120 i f t s t a permissible pulse load i fmax / i fdc = f ( t p ) 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 0 10 1 10 2 10 - i fmax / i fdc d = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 permissible pulse load r thjs = f ( t p ) 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 0 10 1 10 2 10 3 10 k/w r thjs 0.5 0.2 0.1 0.05 0.02 0.01 0.005 d = 0
bar 81w oct-05-1999 4 forward current i f = f ( v f ) t a = 25c 400 500 600 700 800 mv 1000 v f -1 10 0 10 1 10 2 10 3 10 ma i f forward resistance r f = f ( i f ) f = 100mhz 10 -1 10 0 10 1 ma i f 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 ohm 3.0 r f diode capacitance c t = f ( v r ) f = 100mhz 0 1 2 3 4 5 6 7 8 v 10 v r 0.2 0.3 0.4 0.5 0.6 0.7 0.8 pf 1.0 c t diode capacitance c t = f ( v r ) f = 1mhz 0 1 2 3 4 5 6 7 8 v 10 v r 0.2 0.3 0.4 0.5 0.6 0.7 0.8 pf 1.0 c t
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